Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor
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United States of America Patent
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May 21, 2002
Grant Date -
N/A
app pub date -
Jun 9, 2000
filing date -
Jun 9, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor where uniformity of temperature across the width and breadth of a semiconductor wafer is achieved by placement of a dome-shaped thermal insert in close proximity to a semiconductor wafer in process. Thermal energy is absorbed by the thermal insert from the semiconductor wafer at a high rate where the spacing between the thermal insert and semiconductor wafer is at a minimum and at a gradually reduced rate where the spacing between the thermal insert and semiconductor wafer is gradually increased. A guard ring is also incorporated to negate bottom side reflective thermal energy exposure.
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