Method for fabricating semiconductor device
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United States of America Patent
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May 21, 2002
Grant Date -
N/A
app pub date -
Nov 6, 2000
filing date -
Nov 4, 1999
priority date (Note) -
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Abstract
A method for fabricating a semiconductor device includes the steps of: forming a transistor on a semiconductor substrate; forming a first interlayer insulating film over the entire structure including the transistor; planarizing the first interlayer insulating film; forming a stabilized insulating film consisting of an insulating material having low thermal expansion and shrinkage on the first interlayer insulating film; forming an interconnection line on the stabilized insulating film; forming a second interlayer insulating film on the stabilized insulating film to cover the interconnection line; and forming a metal electrode on the second interlayer insulating film in order to contact the semiconductor substrate. The interconnection line on the interlayer insulating film does not move as a result of the thermal treatment process, and thus does not cause shorts with the metal electrode. As a result, the leakage current is prevented and the electrical properties of the semiconductor is improved.
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