Cu plated ceramic substrate and a method of manufacturing the same
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United States of America Patent
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May 21, 2002
Grant Date -
Dec 13, 2001
app pub date -
Apr 11, 2001
filing date -
Apr 27, 2000
priority date (Note) -
Expired
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Abstract
A Cu plated ceramic substrate is used in a semiconductor. On a ceramic substrate layer, a thin-film Cr layer is put, and a thin-firm Au layer is put on the Cr layer. The Au layer is plated with Cu. By providing the Au and Cr layers between the ceramic plate and Cu layer, adhesibility is increased. A Pertier element which includes the Cu plated ceramic layer is employed in a semiconductor to absorb and generate heat efficiently.
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