Method for reactive ion etching and apparatus therefor
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United States of America Patent
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May 21, 2002
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app pub date -
Sep 21, 1998
filing date -
Sep 22, 1997
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Abstract
The invention provides a method for reactive-ion etching a magnetic material with a plasma of a mixed gas of carbon monoxide and a nitrogen-containing compound, the method comprising a step, in which a multilayered film comprising a magnetic material thin film having thereon a resist film formed on a substrate is exposed to an electron beam and then developed, to form a pattern on the resist film, a step, in which a mask material is vacuum deposited, a step, in which the resist is dissolved, to form a mask, and a step, in which a part of the magnetic material thin film that is not covered with the mask is removed by reactive ion etching with a plasma of a mixed gas of carbon monoxide and a nitrogen-containing compound, to form a pattern on the magnetic material thin film, and thus obtaining the magnetic material thin film finely worked.
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