Method of making SiC single crystal and apparatus for making SiC single crystal
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United States of America Patent
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May 21, 2002
Issued Date -
N/A
app pub date -
Dec 29, 2000
filing date -
Jan 19, 1998
priority date (Note) -
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Abstract
An apparatus comprises an Si-disposing section in which solid Si is disposed; a seed-crystal-disposing section in which a seed crystal of SiC is disposed; a synthesis vessel adapted to accommodate the Si-disposing section, the seed-crystal-disposing section, and carbon; heating means adapted to heat the Si-disposing section and the seed-crystal-disposing section; and a control section for transmitting to the heating means a command for heating the Si to an evaporation temperature of Si or higher and heating the seed crystal to a temperature higher than that of Si; wherein the Si evaporated by the heating means is adapted to reach the seed-crystal-disposing section.
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