MOSFET mixer for low supply voltage

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United States of America Patent

PATENT NO 6388501
SERIAL NO

09886233

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Abstract

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A MOSFET operating as a mixer has its drain biased at the knee of the I.sub.D vs V.sub.DS characteristic. A local oscillator voltage is applied to the gate and a RF signal voltage is applied to the drain through a singled-ended source follower. The nonlinear curvature at the knee produces a beat frequency current. This mixer requires less supply voltage, and results in more conversion gain and less feed-through of the RF input signal than the Gilbert multiplier. Conversely, the RF voltage can be applied to the gate and the local oscillator voltage can be applied to the drain.

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Patent Owner(s)

Patent OwnerAddress
PROMINENET COMMUNICATIONS INCSAN DIEGO CA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chien, Hwey-Ching San Diego, CA 17 116

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