Low dielectric constant etch stop layers in integrated circuit interconnects
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United States of America Patent
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May 14, 2002
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N/A
app pub date -
Feb 1, 2001
filing date -
Feb 1, 2001
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Abstract
An integrated circuit and method of manufacture therefore is provided having a semiconductor substrate with a semiconductor device with a dielectric layer over the semiconductor substrate. A conductor core fills the opening in the dielectric layer. An etch stop layer with a dielectric constant below 5.5 is formed over the first dielectric layer and conductor core. A second dielectric layer over the etch stop layer has an opening provided to the conductor core. A second conductor core fills the second opening and is connected to the first conductor core.
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