Semiconductor device
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United States of America Patent
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May 14, 2002
Issued Date -
N/A
app pub date -
Apr 17, 2001
filing date -
Jun 7, 2000
priority date (Note) -
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Abstract
The object of the invention is to improve a characteristic under a reverse bias. A P base layer (6) is provided as a plurality of band-shaped portions parallel with each other. A P.sup.+ base layer to be a downward protrusion having a high impurity concentration is not formed in a bottom portion of the P base layer (6). The P base layer (6) is formed more shallowly than an N layer (17), and furthermore, the band-shaped portions forming the P base layer (6) are coupled to each other at ends thereof. Moreover, an N source layer (5) is ladder-shaped and is connected to a source electrode (16) through only a crosspiece portion thereof.
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