Method for growing thin silicon oxides on a silicon substrate using chlorine precursors
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United States of America Patent
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May 14, 2002
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N/A
app pub date -
Nov 26, 1997
filing date -
Mar 28, 1997
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Expired
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Abstract
A method of growing a silicon oxide layer on a silicon substrate by means of a thermal oxidation in a furnace in the presence of a gaseous mixture, said mixture comprising oxygen and Cl.sub.2, said Cl.sub.2 being generated by an organic chlorine-carbon source, particularly oxalyl chloride. This method is directed to the growth of (ultra) thin silicon oxides and/or the cleaning of a substrate using a low oxidation power. Consequently the method disclosed is especially suited for temperature below 700.degree. C. and for oxidation ambients containing only small amounts of oxygen.
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