Method for manufacturing field effect transistor capable of successfully controlling transistor characteristics relating to the short-channel effect
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United States of America Patent
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May 14, 2002
Grant Date -
N/A
app pub date -
Nov 22, 2000
filing date -
Jan 12, 2000
priority date (Note) -
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Abstract
A gate electrode having a gate length of 0.4 .mu.m or less is formed on a semiconductor substrate. Gate length of this gate electrode is measured, and dose of ion implantation for forming the source region and the drain region is variably set according to the gate length measured value so that transistor characteristics relating to the short-channel effect comes to a specified level.
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