Method of increasing selectivity in silicon nitride deposition
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United States of America Patent
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May 7, 2002
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N/A
app pub date -
Dec 18, 2000
filing date -
Dec 18, 2000
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Abstract
A method of increasing the selectivity of silicon nitride deposition. A substrate is provided. A silicon oxide layer is formed over a portion of the substrate. Ammonia NH.sub.3 is passed over the silicon oxide layer and the substrate surface for a definite period to perform a surface treatment. Silicon nitride is subsequently deposited over the substrate and the silicon oxide layer.
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