Method of making semiconductor super-atom and aggregate thereof
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United States of America Patent
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May 7, 2002
Grant Date -
N/A
app pub date -
May 31, 2000
filing date -
May 31, 1999
priority date (Note) -
Expired
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Abstract
The present invention probides a novel method for fabricating a semiconductor super-atom and an aggregate thereof, which allows the formation of a semiconductor nano-structure with a diameter in the order of 10 nm, which is meant for constituting a core, and allows the doping of impurity atoms only to the core portion with the number of the impurity atoms being controlled. For example, droplet epitaxy is employed for the formation of the semiconductor nano-structure which constitutes the core, and scanning tunnel microscopy is employed for the doping of impurity atoms into the semiconductor nano-structure, so as to selectively introduce the impurity atoms only into the core, with the number of the impurity atoms controlled with a single-atom level accuracy
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