Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates
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United States of America Patent
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Apr 30, 2002
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N/A
app pub date -
Aug 1, 2001
filing date -
Aug 1, 2001
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Abstract
Methods for cleaving semiconductor structures formed on c-face sapphire substrates are disclosed. An exemplary method includes forming at least one III-V nitride layer on the top c-face of a c-face sapphire substrate. A line of weakness is formed on the bottom c-face of the c-face sapphire substrate in the a-plane direction of the c-face sapphire substrate. A force is applied to the bottom c-face to cleave the c-face sapphire substrate along the line of weakness in the a-plane direction, and to form a cleaved facet along an m-plane of each III-V nitride layer. The III-V nitride layers can be included in laser diodes and other light-emitting devices.
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