Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells

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United States of America Patent

PATENT NO 6373746
SERIAL NO

09667610

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Data having three values or more is stored in a memory cell in a nonvolatile manner. A data circuit has a plurality of storage circuits. One of the plurality of storage circuits is a latch circuit. Another one of the plurality of storage circuits is a capacitor. The latch circuit and the capacitor function to temporarily store program/read data having two bits or more. Data held by the capacitor is refreshed using the latch circuit if data variation due to leakage causes a program. As a result, the data circuit does not become large in size even if multi-level data is used.

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Patent Owner(s)

Patent OwnerAddress
TOSHIBA MEMORY CORPORATION1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shibata, Noboru Yokohama, JP 311 4902
Takeuchi, Ken Tokyo, JP 169 6391
Tanaka, Tomoharu Yokohama, JP 338 14532

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  • 274 Citation Count
  • G11C Class
  • 97.57 % this patent is cited more than
  • 23 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1524617092412623139531601 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +020406080100120140160180200220240260

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