Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
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United States of America Patent
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Apr 16, 2002
Grant Date -
N/A
app pub date -
Sep 22, 2000
filing date -
Sep 28, 1999
priority date (Note) -
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Abstract
Data having three values or more is stored in a memory cell in a nonvolatile manner. A data circuit has a plurality of storage circuits. One of the plurality of storage circuits is a latch circuit. Another one of the plurality of storage circuits is a capacitor. The latch circuit and the capacitor function to temporarily store program/read data having two bits or more. Data held by the capacitor is refreshed using the latch circuit if data variation due to leakage causes a program. As a result, the data circuit does not become large in size even if multi-level data is used.
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