MOSFET and fabrication method thereof
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United States of America Patent
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Apr 16, 2002
Issued Date -
N/A
app pub date -
Jun 4, 2001
filing date -
Mar 18, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A MOSFET is fabricated by forming a trench in a semiconductor substrate, forming an insulating film in the trench, forming a gate electrode to fill in the trench, forming a gate oxide on the gate electrode, the insulating film and an adjacent portion of the semiconductor substrate, forming a first silicon film on the semiconductor substrate and on a portion of the gate oxide, and forming a second silicon film on a portion of the gate oxide on which the first silicon film is not formed. Since the thusly fabricated MOSFET has a controlled channel length, modeling of the device can be easily achieved and its mass-producibility is improved.
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