Semiconductor laser with kink suppression layer
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United States of America Patent
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Apr 2, 2002
Issued Date -
N/A
app pub date -
Jun 20, 2000
filing date -
Dec 31, 1997
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Abstract
A kink suppression technique is disclosed in which optical characteristics of a distributed feedback laser diode's resonant cavity are controlled to preferentially prevent establishment of higher order lateral modes. This results in increased kink powers and thus the useful power range of the device. Specifically, an optical layer, preferably silicon or titanium, is disposed along the optical axis, on the etched upper cladding layer, and on both sides of the ridge.
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