Power MOS transistor
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United States of America Patent
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-
Apr 2, 2002
Grant Date -
N/A
app pub date -
Jul 26, 2000
filing date -
Aug 20, 1999
priority date (Note) -
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Abstract
A new and improved power MOS transistor having a protective diode with an increased breakdown voltage difference and less sheet resistivity is disclosed. In an up-drain type MOSFET, an n-type well layer has its top surface in which an elongated p-type base region is provided adjacent to a deep n.sup.+ -type region (drain region). The p-type base region is formed so that it partly overlaps the deep n.sup.+ region. A p.sup.+ -type region (p-type base region) is connected to a source electrode. A surge bypassing diode D1 is thus formed between the source and drain of the MOSFET.
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