Method for producing an ohmic contact
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United States of America Patent
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-
Apr 2, 2002
Grant Date -
Nov 8, 2001
app pub date -
Mar 23, 2001
filing date -
Sep 23, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A component is produced on a substrate made of SiC. The component has at least one ohmic contact and at least one Schottky contact. The component is brought to a temperature of more than 1300.degree. C. at least during the growth of an epitaxial layer. To ensure that the production of the ohmic contact does not lead to impairment of other structures on the component and that the ohmic contact, for its part, is insensitive with respect to later method steps at high temperatures, the first metal is applied to the substrate for the ohmic contact before the epitaxial layer is grown.
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