Method for nitride based laser diode with growth substrate removed using an intermediate substrate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 2, 2002
Issued Date -
N/A
app pub date -
Mar 26, 1999
filing date -
Dec 30, 1998
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for placing nitride laser diode arrays on a thermally conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully