Single crystal material auxiliary melting apparatus and single crystal material melting method

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United States of America Patent

PATENT NO 6361597
SERIAL NO

09403621

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Abstract

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The present invention aims to improve thermal efficiency and to reduce melting time when a raw material in an auxiliary crucible is heated and melted by induction heating method. When an initial raw material 30a is at low temperature and its conductivity is relatively low, a conductive carbon cylinder 2 is arranged at such a height as to cover the entire side wall of the auxiliary crucible 1, and when high frequency current is applied on a high frequency coil 3, secondary induction current is generated on the carbon cylinder 2. Then, Joule heat is generated on the carbon cylinder 2 by the secondary induction current, and heat of the carbon cylinder 2 is transmitted to the raw material inside via the auxiliary crucible 1. Thus, the raw material is heated, and melting is started. When the raw material is melted, an insulating ceramic base 4 is arranged at such a position as to cover the entire side wall of the auxiliary crucible 1. Because conductivity of the raw material is gradually increased, secondary induction current is generated in the melt 30b, and Joule heat is generated in the melt 30b itself by the secondary induction current.

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Patent Owner(s)

Patent OwnerAddress
SUPER SILICON CRYSTAL RESEARCH INSTITUTE CORPANNAKA-SHI GUNMA-KEN 379-0125

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Machida, Tomohisa Annaka, JP 1 16
Shiraishi, Yutaka Annaka, JP 48 214
Takase, Nobumitsu Annaka, JP 16 126

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