System for controlling the temperature of a reflective substrate during rapid heating
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United States of America Patent
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-
Mar 19, 2002
Grant Date -
Nov 15, 2001
app pub date -
Sep 3, 1999
filing date -
Sep 3, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A system and process is disclosed for rapidly heating semiconductor wafers coated with a highly reflective material on either the whole wafer or in a patterned area. The wafers are heated in a thermal processing chamber by a plurality of lamps. In order for the wafer coated with the highly reflective material to more rapidly increase in temperature with lower power intensity, a shield member is placed in between the wafer and the plurality of lamps. The shield member is made from a high emissivity material, such as ceramic, that increases in temperature when exposed to light energy. Once heated, the shield member then in turn heats the semiconductor wafer with higher uniformity. In one embodiment, the shield member can also be used to determine the temperature of the wafer as it is heated.
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