Semiconductor laser with tunable gain spectrum
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United States of America Patent
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Mar 5, 2002
Grant Date -
N/A
app pub date -
Sep 16, 1999
filing date -
Oct 7, 1998
priority date (Note) -
Expired
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Abstract
Semiconductor laser with a tunable gain spectrum. Said laser comprises an active zone having at least one active quantum well (AQW), which emits a laser radiation during the introduction of carriers into the active zone and at least one collection quantum well (CQW.sub.1, CQW.sub.2) on either side of the active well, for collecting and confining part of the carriers introduced. Means for distributing carriers in the collection wells are provided for creating a space charge field for modifying, during the emission of radiation and by an electrooptical effect, the gain spectrum of said active well. Application to optical telecommunications.
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