Electrode for semiconductor device and method for manufacturing same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Feb 19, 2002
Issued Date -
N/A
app pub date -
Jan 14, 2000
filing date -
Apr 28, 1994
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The purpose of the present invention is to obtain an electrode wiring structure for semiconductor devices that can suppress the occurrence of Al voids inside aluminum alloy wiring without regard to the orientation of such aluminum alloy wiring. An interlayer insulator film 11, a titanium layer 12, a titanium nitride layer 13 that serves as the barrier layer, an aluminum alloy wiring layer 15 and a protective film 18 are formed on top of the silicon substrate 10 to compose the electrode structure. In this case, a distortion relaxation layer 14, with a film thickness of approximately over 10 nm and which is an intermetallic compound that includes aluminum and titanium in its composition, is formed in between the titanium nitride layer 13 and the aluminum alloy wiring layer 15. Because of this distortion relaxation layer, for every wiring width of 1 .mu.m, the number of Al voids with widths of over 0.3 .mu.m is practically reduced to 0.
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Patent Citation Ranking
- 6 Citation Count
- H01L Class
- 1.35 % this patent is cited more than
- 23 Age