Fabrication method of Si nanocrystals
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 5, 2002
Grant Date -
N/A
app pub date -
Jun 29, 1999
filing date -
Jul 1, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Si nanocrystals are formed by irradiating SiO.sub.2 substrates with electron beams at a temperature of 400.degree. C. or higher, thereby causing electron-stimulated decomposition reaction. As a result of the said reaction, single crystalline Si nanostructures are fabricated on the SiO.sub.2 substrate with good size and positional controllability.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully