Tailoring of linewidth through electron beam post exposure
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United States of America Patent
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Jan 22, 2002
Grant Date -
N/A
app pub date -
Jun 8, 2000
filing date -
Aug 4, 1999
priority date (Note) -
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Abstract
A process for decreasing the linewidth of photoresist images which are suitable for use in the production of microelectronic devices such as integrated circuits. A photosensitive composition is coated onto a substrate, exposed to activating energy to decompose the polymer in the imagewise exposed areas; and developed to remove the exposed nonimage areas thus producing a pattern of lines having a linewidth of from about 100 nm to about 200 nm. Then the image areas are controllably irradiated to sufficient electron beam radiation to thereby reduce the linewidth by an amount of from about 5% to about 50%.
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