Semiconductor structure for flash memory enabling low operating potentials
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United States of America Patent
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Dec 11, 2001
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N/A
app pub date -
May 27, 1997
filing date -
May 30, 1996
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Abstract
A semiconductor structure for a flash memory has memory cells which are formed in a first conductivity type well, which in turn is formed within an opposite conductivity type well. The opposite conductivity type well is formed in the substrate. Additional regions within each of the first and opposite conductivity type wells are used to provide electrical connections to the corresponding well. This structure is particularly advantageous because it provides the ability to operate the flash memory with considerably lower operating potentials than prior art flash memories.
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