Dual conductor inductive sensor for a non-volatile random access ferromagnetic memory
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 11, 2001
Grant Date -
N/A
app pub date -
Feb 29, 2000
filing date -
Mar 4, 1999
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A nonvolatile ferromagnetic RAM device which is capable of reading the data stored in each magnet quickly and efficiently utilizing a minimal number of components. Specifically there is a nonvolatile ferromagnetic RAM which is capable of reading the data stored in each magnetic bit. The ferromagnetic memory cell, comprising of a base (19) that is oriented in a horizontal plane. There is also a bit (3), made of a ferromagnetic material, having: a height that is oriented perpendicular to the horizontal plane of the base, and a polarity that can be directed along the height. Additionally, there is a sense line (1), positioned proximate the bit (3) sufficient to detect the directed polarity of the bit; and a write line (2), positioned proximate the bit sufficient to direct the polarity of the bit. Additionally, there is a detector, coupled to the sense line; and a sample drive line (14), positioned proximate the bit (3) to transmit an electric pulse that will increase the directed polarity of the bit sufficient to induce a wave into the sense line that can be detected by the detector.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully