Nitride semiconductor light emitting device and manufacturing method thereof
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United States of America Patent
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Dec 11, 2001
Grant Date -
N/A
app pub date -
Feb 8, 2000
filing date -
Feb 9, 1999
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Abstract
A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.
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