Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof
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United States of America Patent
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Dec 4, 2001
Grant Date -
N/A
app pub date -
Sep 2, 1998
filing date -
Sep 2, 1997
priority date (Note) -
Expired
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Abstract
A wavelength-variable semiconductor laser includes: a submount; and a semiconductor laser chip being mounted onto the submount and having at least an active layer region and a distributed Bragg reflection region, wherein the semiconductor laser chip is mounted onto the submount in such a manner that an epitaxial growth surface thereof faces the submount and a heat transfer condition of the active layer region is different from a heat transfer condition of the distributed Bragg reflection region. Moreover, an optical integrated device includes at least a semiconductor laser and an optical waveguide device both mounted on a submount, wherein the semiconductor laser is the wavelength-variable semiconductor laser as set forth above.
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