Contact hole of semiconductor and its forming method
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United States of America Patent
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-
Dec 4, 2001
Grant Date -
N/A
app pub date -
Dec 3, 1998
filing date -
Dec 30, 1997
priority date (Note) -
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Abstract
Provided with a contact hole of a semiconductor device and its forming method which is adapted to form double slopes in the insulating layer, with the contact hole including an insulating layer formed on a semiconductor substrate, and a contact hole having double slopes, exposing a defined region of the semiconductor substrate.
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