Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices
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United States of America Patent
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Dec 4, 2001
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N/A
app pub date -
Apr 24, 2001
filing date -
Apr 27, 2000
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Abstract
A method of fabricating on ohmic metal electrode. The p-type ohmic metal electrode according to the present invention employs Ru and RuO.sub.x as the cover layer in lieu of conventional Au, in order to effectively prevent penetration by contaminants in the air, such as oxygen, carbon, and H.sub.2 O, and to form a stable metal-Ga intermetallic phase at the junction between the contact layer and the nitride compound semiconductor. The n-type ohmic metal electrode according to the present invention employs Ru as the diffusion barrier in lieu of conventional Ni or Pt, in order to effectively form a metal-nitride phase such as titanium nitride that contributes to superior ohmic characteristics during the heating process, without destruction of the junction. According to the present invention, it is possible to fabricate devices having superior electrical, optical, and thermal characteristics compared with conventional devices.
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