Method of manufacturing semiconductor wafer
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United States of America Patent
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Nov 27, 2001
Grant Date -
N/A
app pub date -
Feb 26, 2001
filing date -
Mar 27, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed is a method for manufacturing a semiconductor wafer having an epitxial layer on a surface thereof, by the steps of forming a pritective oxide film on a surface of a semiconductor wafer prior to loading of the wafer into an eptaxial growth furnace, removing the protective oxide film formed on the surface of the wafer by heating after the wafer is loaded in the furnace, and performing epitaxial growth of the epitaxial layer on the surface from which the protective oxide film is removed in the furnace. The protective oxide film is removed by heating the wafer in the furnace in an ambience of hydrogen gas at a pressure ranging from 0.0133.times.10.sup.5 Pa to 1.013.times.10.sup.5 Pa and at a temperature ranging from 800.degree. C. to 1,000 .degree. C., or by heating the wafer in the furnace at a pressure of 5.times.10.sup.6 Pa or under and at a temperature ranging from 800.degree. C. to 1,000.degree. C.
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