Modification of 193 nm sensitive photoresist materials by electron beam exposure
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United States of America Patent
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Nov 20, 2001
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N/A
app pub date -
Jun 11, 1999
filing date -
Jun 11, 1999
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Abstract
A process for increasing the etch resistance of photoresists, especially positive working 193 nm sensitive photoresists which are suitable for use in the production of microelectronic devices such as integrated circuits. A 193 nm photosensitive composition is coated onto a substrate, exposed to activating energy at a wavelength of 193 nm to decompose the polymer in the imagewise exposed areas; and developed to remove the exposed nonimage areas. Then the image areas are exposed to sufficient electron beam radiation to increase the resistance of the image areas to an etchant.
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