Co sensor and its fabrication
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United States of America Patent
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-
Nov 20, 2001
Grant Date -
N/A
app pub date -
Jun 15, 1999
filing date -
Jun 16, 1998
priority date (Note) -
Expired
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Abstract
After sintering of a CO sensor using an SnO2-based metal oxide semiconductor, Ir and Pt are added to the sensor at 5.about.500 .mu.g/g SnO2 each, the weight ratio of Ir and Pt being 5.about.1/5. This addition is made by impregnating a mixed aqueous solution of an Ir salt and a Pt salt into the SnO2 sintered body and thermally decomposing these salts. Next, an aqueous solution of thiourea is impregnated into the SnO2 sintered body to add thiourea at 0.01.about.10 mg/g SnO2 in reduction to simple S element. The temperature and humidity dependency of the CO sensor is suppressed, the CO concentration dependency of the output is increased, and the sensor resistance is brought to a more convenient range of use.
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