Flared and tapered rib waveguide semiconductor laser and method for making same
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United States of America Patent
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Nov 13, 2001
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N/A
app pub date -
Apr 11, 2000
filing date -
Apr 11, 2000
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Abstract
A semiconductor laser structure based upon a rib waveguide geometry which includes a uniform region and a flared and tapered region. The uniform region has a generally constant thickness and width. The flared tapered region gradually increases in width and decreases in thickness from the uniform region to a wide end. Fabrication is by selective area epitaxy with dielectric stripes in a dual stripe dielectric mask used to defined the two dimensional varying flare in the waveguide changing in thickness as a function of the flare width.
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