Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure
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United States of America Patent
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Nov 13, 2001
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N/A
app pub date -
Feb 22, 2000
filing date -
Aug 20, 1997
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Abstract
A semiconductor structure includes at least one .alpha.-silicon carbide region and an electrically insulating region, e.g. made of an oxide layer, and an interface located between them. The selection of an .alpha.-silicon carbide polytype having a smaller energy gap than that of the 6H silicon carbide polytype for at least one region near the interface results in a high charge carrier mobility in this region.
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