Surface acoustic wave device
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United States of America Patent
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Oct 30, 2001
Grant Date -
N/A
app pub date -
Mar 23, 2000
filing date -
Mar 25, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An SAW device includes a glass substrate, an LiNbO.sub.3 (LN) substrate, and an electrode. When a pitch of the electrode is .lambda., a thickness of the LN substrate is H, and K equals to 2.pi./.lambda., a product of K and H is at least 0.5 and at most 1.0. Accordingly, an SAW device is obtained which is provided with high K.sup.2 and an enhanced temperature characteristic and which can be advantageously reduced in size.
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