Electrode structures for light emitting devices
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United States of America Patent
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Oct 23, 2001
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N/A
app pub date -
Nov 20, 1998
filing date -
Nov 20, 1998
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Abstract
A light emitting device includes a heterojunction having a p-type layer and an n-type layer. The n-electrode is electrically connected to the n-type layer while the p-electrode is electrically connected to the p-type layer. The p and n-electrodes are positioned to form a region having uniform light intensity.
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