Sacrificial multilayer anti-reflective coating for mos gate formation
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United States of America Patent
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Oct 2, 2001
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N/A
app pub date -
Jun 23, 1998
filing date -
Jun 23, 1998
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Abstract
The present invention relates to semiconductor devices in general, and more particularly to semiconductor devices having anti-reflective coatings to aid in the patterning of a reflective layer thereon to form, for example, a gate electrode. The invention also relates to methods for making a semiconductor having a patterned reflective layer.
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