Method for forming a semiconductor device using a mask having a self-assembled monolayer
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United States of America Patent
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Oct 2, 2001
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N/A
app pub date -
Jul 27, 1998
filing date -
Jul 27, 1998
priority date (Note) -
Expired
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Abstract
A passivating layer (220) is formed overlying portions of a mask (200). The mask (200) is used to pattern a semiconductor device substrate (62). In accordance with one embodiment of the present invention, the passivating layer (220) is removed prior to patterning the semiconductor device substrate (62). In yet another embodiment, the passivating layer (220) is cleaned prior to patterning the semiconductor device substrate (62) and then left to remain overlying portions of the mask (200) during the patterning process.
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