End point detecting method for semiconductor plasma processing
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United States of America Patent
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Oct 2, 2001
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app pub date -
Aug 3, 2000
filing date -
Feb 3, 1998
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Abstract
When plasma-etching a silicon dioxide film with a CF-based gas, the emission intensities (Ia, Ib) of CF-based radicals and carbon monoxide are observed through spectroscopes (61, 62). First, first and second approximate expressions (Fa(x), Fb(x)) which approximate the characteristic curves of the emission intensities (Ia, Ib) within a specified period are obtained, and the ratio of the standard deviations of the emission intensities (Ia, Ib) to the values of the first and second approximate expressions (Fa(x), Fb(x)) is obtained as a correction coefficient .alpha.. When the specified period has elapsed, first and second intermediate expressions (Ia/Fa(x), Ib/Fb(b)) are obtained, and a criterion expression ([Ia/Fa(x)]/{.alpha.[Ib/Fb(x)-1]+1}, which expresses the ratio of the first intermediate expression to the second intermediate expression and is weight-corrected with the correction coefficient (.alpha.), is obtained. The end point of the etching point is determined on the basis of this criterion expression.
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