Silicon with structured oxygen doping, its production and use
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United States of America Patent
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Sep 25, 2001
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N/A
app pub date -
Jun 9, 2000
filing date -
Jun 17, 1999
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Abstract
The present invention relates to silicon with a high oxygen content and, at the same time, a high density of crystal lattice dislocations, and to its production. This silicon may be used in photovoltaics. Solar cells which are based on the material according to the invention exhibit high levels of efficiency despite the high oxygen content.
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