Method for manufacturing p-type GaN based thin film using nitridation
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United States of America Patent
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Sep 25, 2001
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app pub date -
Oct 20, 1999
filing date -
Oct 20, 1999
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Abstract
Disclosed is a method for manufacturing a high conductivity p-type GaN-based thin film superior in electrical and optical properties by use of nitridation and RTA (rapid thermal annealing) in combination. A GaN-based epitaxial layer is grown to a desired thickness while being doped with Mg dopant with a carrier gas of hydrogen by use of a MOCVD process. The film thus obtained is subjected to nitridation using nitrogen plasma and RTA in combination. The p-type GaN-based thin film exhibits high hole concentration as well as low resistivity, so that it can be used where high electrical, optical, thermal and structural properties are needed. The method finds application in the fabrication of blue/white LEDs, laser diodes and other electronic devices.
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