Magneto resistor sensor with differential collectors for a non-volatile random access ferromagnetic memory
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United States of America Patent
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Sep 11, 2001
Grant Date -
N/A
app pub date -
Feb 29, 2000
filing date -
Mar 4, 1999
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Abstract
A non-volatile RAM device is disclosed which utilizes a plurality of ferromagnetic bits (6) each surrounded by a coil of a write line (13) for directing the remnant polarity thereof is disclosed. The direction of magnetic remnance in each bit (6) is dictated by the direction of a current induced into write line (13). Further, a magneto sensor (7) comprising a magneto resistor (1) coupled to a pair of collectors (2a & 2b) is placed approximate each bit (6). The magneto resistor (1) is coupled to a control circuit (30) for receiving current. The current passing across magneto resistor (1) is biased in a direction either right or left of the original current flow direction. The collectors are coupled to a pair of sense lines (4a & 4b), which are in turn, coupled to a voltage differential amplifier (12). The collector in the direction of biased current flow, will receive a greater number of electrons than the other collector, and therefore have a greater negative charge. This voltage differential is conducted through the sense lines (4a & 4b) to the voltage differential amplifier (12), where it is amplified and detected.
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