Thin film transistor and method for producing same
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United States of America Patent
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Sep 11, 2001
Grant Date -
N/A
app pub date -
Apr 2, 1999
filing date -
Apr 3, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A thin film transistor includes: an insulating substrate; a semiconductor layer of a polycrystalline silicon formed on the insulating substrate; a gate insulator film formed so as to contact the semiconductor layer; a gate electrode formed so as to contact the gate insulator film; an active layer formed in a region of the semiconductor layer corresponding to the gate electrode; a first semiconductor region which is formed in the semiconductor layer outside of the active layer and which has an impurity concentration of higher than or equal to 1.times.10.sup.18 cm.sup.-3 and lower than 1.times.10.sup.20 cm.sup.-3 ; and a second semiconductor region which is formed in the semiconductor layer outside of the first semiconductor region and which has an impurity concentration of higher than that of the first semiconductor region, the second semiconductor region having the same conductive type as that of the first semiconductor region. Thus, it is possible to obtain a reliable thin film transistor having small OFF current.
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