Pest resistant MoSi2-based materials containing in-situ grown .beta.-Si3N4whiskers
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United States of America Patent
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Sep 11, 2001
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N/A
app pub date -
Feb 9, 2000
filing date -
Feb 9, 2000
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Expired
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Abstract
A MoSi.sub.2 pest resistant material includes in-situ grown .beta.-Si.sub.3 N.sub.4 whiskers. In addition to excellent pest resistance, the material provides a lower coefficient of thermal expansion for better match with continuous reinforcing fibers such as SiC fibers. A two stage heating and pressing production technique enables lower temperature processing with substantially full densification.
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