Semiconductor device having thin film resistor and method of producing same
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United States of America Patent
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Sep 11, 2001
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N/A
app pub date -
Jan 3, 1992
filing date -
Jul 15, 1988
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Abstract
A semiconductor device having a thin film resistor which comprises at least chromium, silicon and nitrogen, and formed on a substrate with having a special ratio of the chemical composition, the semiconductor device having a characteristic such that variations of the resistance value thereof due to temperature variations can be effectively suppressed.
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