Buried hetero-structure InP-based opto-electronic device with native oxidized current blocking layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 11, 2001
Grant Date -
N/A
app pub date -
Jan 20, 1999
filing date -
Jan 21, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A buried hetero-structure with native oxidized current blocking layer for InP-based opto-electronic devices comprises a InP semiconductor substrate, a buffer layer, a ridge mesa containing lower confinement layer, active layer and upper grating confinement layer, a first InP cladding layer and a native oxidized Al-bearing layer as current blocking layers at both lateral edges, a second InP cladding layer, contact layer, contact metal, and the second ridge mesa covered with insulating layer. This method is to facilitate the processing of conventional buried hetero-structure InP-based opto-electronic device and improve the performance under high temperature and high current operation.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully