Spin-valve film, magnetoresistance-effect device and magnetoresistance-effect magnetic head
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United States of America Patent
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Sep 11, 2001
Grant Date -
N/A
app pub date -
Sep 16, 1999
filing date -
Sep 21, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A spin-valve film which enables a high output to be obtained and thermal stability to be improved without a necessity of reducing the thickness of films which constitute the spin-valve film, a spin valve type magnetoresistance-effect device and a magnetic head comprising the spin valve type magnetoresistance-effect device. A spin-valve film according to the present invention comprises a fixed layer in which a direction of magnetization is to be directed to substantially a predetermined direction; a non-magnetic layer; and a free layer in which a direction of magnetization is to be changed by an external magnetic field, wherein the free layer comprises at least a laminate film having a Ta film and a NiFeTa film.
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