Nitride based semiconductors and devices
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United States of America Patent
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Sep 4, 2001
Grant Date -
N/A
app pub date -
Apr 20, 1999
filing date -
Mar 5, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A single crystal thin film of the compound ZnSi.sub.X Ge.sub.1-X N.sub.2 (where x can range from 0 to 1). This thin film single crystal can be disposed on a single crystal substrate made of, for example, sapphire, silicon carbide, lithium gallate or silicon with or without an additional GaN buffer layer grown on them. Alternately, a GaN single crystal thin film grown on any substrate can be used. In the case of sapphire, it can be R-plane so that the thin film has its c-axis lying within the thin film or A- or C-plane so that the thin film has its c-axis perpendicular to the substrate. The substrate could also be any substrate with a GaN single crystal thin film deposited on it. ZnSi.sub.X Ge.sub.1-X N.sub.2 single crystal thin films can be made by the MOCVD method using suitable precursors, molar injection ratios, and substrate temperatures. It is possible to make various optical, electro-optical or electronic devices with the material, for example, a second harmonic generator emitting blue light.
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